Semiconductor device and process of fabricating same

摘要

A semiconductor device according to the invention comprises a Schottky layer, a cap layer covering the surface of the Schottky layer, and a Schottky electrode of a two-level structure, having an under structure penetrating through the cap layer and reaching the Schottky layer, and an upper structure larger than the under structure in a cross-sectional area and overlying the cap layer. With such a construction as described, surface defect is unlikely to occur, and therefore, a highly reliable semiconductor device can be fabricated.