| 摘要 |
A mixture of lower alcohols whose mean molecular weight is 46 or less is supplied onto a surface of a semiconductor wafer cleansed with water. With this supply, the amount of alcohols left on the semiconductor wafer which has been dried can be suppressed to 2ng/cm2 or less, and thus a gate oxide film formed on the semiconductor wafer is prevented from deterioration. As a result, a high yield of semiconductor products can be realized.
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