| 摘要 |
PROBLEM TO BE SOLVED: To provide a capacitor which is compact and highly realizable, and a semiconductor device having the same. SOLUTION: A lower electrode 48 of a capacitor is formed by surrounding a V/H 44 of a semiconductor substrate 42 on the substrate 42, and an insulator film 50 is provided on the lower electrode 48. The connecting conductor 44b of the V/H 44 and the lower electrode 48 are isolated by the insulator film 50, and then an upper electrode 52 is placed just above the V/H 44 and the Au film 44b of the V/H 44 is connected with the upper electrode 52.
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