| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device where a fine control when patterning third and fourth layers is allowed to eliminate variations in characteristics. SOLUTION: The device is provided with a first conductive type substrate 21, a second-conductive-type first layer 22 formed on surface of the first conductive type substrate 21, a first-conductive-type second layer 23 formed on the second-conductive-type first layer 22, a first-conductive-type third layer 24 selectively formed on the other surface of the first conductive type substrate 21, a second-conductive-type fourth layer 25 formed on the other surface of the first-conductive-type substrate 21 to a thickness 5-20μm, and an electrode formed by a deposition method with no wax material used for the third layer 24 and a fourth layer 25. The first layer 22 and the third layer 24 are thicker than the fourth layer 25.
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