| 摘要 |
PROBLEM TO BE SOLVED: To form a wide trench whose inner surface is smooth and, at the same time, obtain an angle of a trench side wall which is suitable for burying by preventing generation of black silicon when the trench of a silicon substrate is formed. SOLUTION: The amount of etching of silicon for 1 ml of oxygen supplied to etching gas for a unit time is set in a range of 1000-3700 nm. The magnitude of a static magnetic field to be applied is made at most 4×10-3 tesla, and the flow rate of oxygen is set in a range of 2-5 ml/min.
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