| 摘要 |
In order to check for defects in an electron beam exposure mask M, a mask signal S3 is acquired based on transmission electrons 2Ba acquired by two dimensional scanning of the electron beam exposure mask M by an electron beam scanning device 2, and a CAD signal S4 corresponding to a CAD graphic is acquired, synchronized with output of the mask signal S3 based on CAD data DT for making the electron beam exposure mask M. Defects in the electron beam exposure mask M are checked for defects based on comparison results of the mask signal S3 and the CAD signal S4 |
