| 摘要 |
<p>A semiconductor thin film including a well layer is formed on a semiconductor substrate, the semiconductor substrate together with the semiconductor thin film is cleaved, the cleavage surface of the semiconductor substrate and semiconductor thin film formed by the cleavage is exposed to an atmosphere produced by decomposing a gas containing N in the presence of a heated catalyst substance, thereby removal of the surface layer of the cleavage surface and formation of a nitride layer on the surface are conducted, and a dielectric film is formed on the cleavage surface. Thus, the natural oxide film formed on the cleavage surface is removed by a catalyst CVD apparatus, and a protective film is formed.</p> |
