Semiconductor device for integrated circuit protection circuit, has part insulation layer specifically formed in SOI-layer

摘要

A semiconductor device includes a controlled semiconductor rectifier based on two bipolar transistors (PB1,NB1) of different conductivity type, in which one the transistors has its base and its collector connected to the collector and to a base of the other transistor, and a diode (QN1) is connected in the reverse direction to the collector and to the emitter of one bipolar transistor.