发明名称 DRIVE METHOD FOR SOLID-STATE IMAGE PICKUP DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a drive method for a solid-state image pickup device where a threshold voltage is modulated uniformly over the entire channel area of an insulation gate field effect transistor for detecting an optical signal. SOLUTION: The drive method for the solid-state image pickup device, where an optical signal is read by repeating a storage period in which optically generated charges from a light receiving diode receiving light emission are stored in a carrier pocket 25; a read period in which the optical signal on the basis of the optically generated charges stored in the carrier pocket 25 is read; and an initializing period in which the optically generated charges left in the carrier pocket 25 are discharged in this order, has a voltage applied to a gate electrode 19 of the insulation gate field effect transistor for detecting the optical signal, so that most of the optically generated charges stored in the carrier pocket 25 is discharged from the carrier pocket for the initializing period, and a prescribed amount of the charges is left in the carrier pocket 25.
申请公布号 JP2002064749(A) 申请公布日期 2002.02.28
申请号 JP20000245937 申请日期 2000.08.14
申请人 INNOTECH CORP 发明人 MITSUIDA TAKASHI
分类号 H01L27/146;H01L31/10;H04N1/028;H04N5/335;H04N5/353;H04N5/365;H04N5/369;H04N5/374;(IPC1-7):H04N5/335 主分类号 H01L27/146
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