| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory having such a circuit constitution that reduction of read-out margin is avoided at the time of over-drive of a drive line of a sense amplifier. SOLUTION: This semiconductor memory has such a feedback circuit that the potential of a read-out signal is not reduced in the next operation cycle even if the pre-charge potential of a bit lines BL is raised from 1/2 Vaa by feeding back variation of a pre-charge potentialδ1/2 Vaa of the bit line BL to a plate electrode of a cell capacitor. Also, the pre-charge potential of the bit line BL is reduced to 1/2 Vaa using the power source line of the semiconductor memory and a switch connecting the pre-charge circuit and a plate electrode, the reduction of read-out operation margin can be prevented.
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