发明名称 Semiconductor memory device
摘要 A semiconductor memory device having a self-refresh function includes a detection circuit detecting a change of an output enable signal and generating a state transition detection signal, and a decision circuit comparing the state transition detection signal and a refresh request signal internally generated and generating a signal that indicates a corresponding circuit operation.
申请公布号 US2002024865(A1) 申请公布日期 2002.02.28
申请号 US20010929357 申请日期 2001.08.15
申请人 FUJITSU LIMITED 发明人 FUJIEDA WAICHIRO;FUJIOKA SHINYA
分类号 G11C11/403;G11C11/406;G11C11/408;(IPC1-7):G11C7/00 主分类号 G11C11/403
代理机构 代理人
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