发明名称 Synchronous semiconductor memory device and method for controlling input circuit of synchronous semiconductor memory device
摘要 A method for controlling an input circuit of a synchronous semiconductor memory device that reduces current consumption without changing commands or increasing signal input terminals. The synchronous semiconductor memory device includes an input circuit for receiving write data and is operated based on a synchronizing signal. When the synchronous semiconductor memory device is active, the input circuit is selectively inactivated based on a mask control signal, which masks the write data. When the synchronous semiconductor memory device enters a write mode in which the synchronous semiconductor memory device stores data, the input circuit is activated and the mask control signal is invalidated.
申请公布号 US2002024882(A1) 申请公布日期 2002.02.28
申请号 US20010941765 申请日期 2001.08.30
申请人 FUJITSU LIMITED 发明人 IKEDA SHINICHIRO
分类号 G11C11/407;G11C7/10;G11C11/4076;G11C11/409;G11C11/4093;(IPC1-7):G11C7/22 主分类号 G11C11/407
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