| 摘要 |
<p>A vertical cavity surface emitting laser, or VCSEL, (10) includes a semiconductor device having a pair of mirror portions (18, 20), an active region (14), a tunnel junction (16), a pair of cladding layers (12a, 12b) and a substrate (32). Heat generated by the VCSEL (10) dissipates through the cladding layers (12a, 12b), which utilize an indium phosphide material. The VCSEL (10) also includes selective etches that are used to aperture the active region (14) to allow electric current to be injected into the active region (14).</p> |
