发明名称 COPPER THIN FILM DEPOSITION METHOD AND COPPER THIN FILM DEPOSITION SYSTEM
摘要 PROBLEM TO BE SOLVED: To provide a copper thin film deposition method and a system therefor using a chemical vapor deposition method by which the adhesive properties of a copper thin film to a substrate is made satisfactory and further a copper thin film also having good quality can be deposited. SOLUTION: As to this copper thin film deposition method and system therefor, a gaseous starting material is introduced into a substrate treating chamber in which a substrate is hold and whose pressure is reduced, and a copper thin film is deposited on the substrate. At the initial stage of the film deposition, an additive gas is introduced in addition to the gaseous starting material, and thereafter, the introduction of the additive gas is discontinued, and the introduction of the gaseous starting material is continued, or before the start of the film deposition stage, the additive gas is introduced, and further, at the initial stage of the film deposition, the additive gas is introduced in addition to the gaseous starting material. Subsequently, the introduction of the additive gas is discontinued, and the introduction of the gaseous starting material is continued, and the deposition of a copper thin film is performed.
申请公布号 JP2002060942(A) 申请公布日期 2002.02.28
申请号 JP20010027292 申请日期 2001.02.02
申请人 ANELVA CORP 发明人 CHO BINKEN;KOBAYASHI AKIKO;SASAKI TOSHIAKI;AKIYAMA SUSUMU;SEKIGUCHI ATSUSHI
分类号 C23C16/18;C23C16/44;C23C16/455;H01L21/28;H01L21/285;H01L21/3205;H01L23/52;(IPC1-7):C23C16/18;H01L21/320 主分类号 C23C16/18
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