发明名称 SUBSTRATE FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH THREE ELEMENT ALLOY
摘要 <p>The substrate according to the present invention is comprised of a silver/gold/grain element alloy layer, wherein the alloy forms an outside layer of the product. The grain element is selected from a group consisting of selenium, antimony, bismuth, nickel, cobalt, indium and combination thereof. The present invention has a particular application in forming the outside layer of various items, including a lead frame, a ball grid array, a hader, a printed circuit board, a reed switch and a connector.</p>
申请公布号 WO2002017396(A1) 申请公布日期 2002.02.28
申请号 KR2001001400 申请日期 2001.08.17
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