MASK PATTERN CORRECTION METHOD AND CORRECTION DEVICE

摘要

PROBLEM TO BE SOLVED: To suppress the deterioration in correction accuracy to the lowest possible extent while abiding by the limit value of mask defect inspection and to suppressing the generation of twisted patterns. SOLUTION: In the mask pattern correction method of correcting a design pattern which is the origin in forming the mask patterns in such a manner that the patterns formed on the mask are transferred as designed onto a wafer, the spacings between the edges of the design pattern and the edges adjacent thereto are calculated by each of the respective edges before a process step of moving the edges of the design pattern (S2) and whether the edges are the edges to be corrected of the adjacent edges or not is decided (S3). The maximum movable quantity is then determined in accordance with such information (S4).