METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a light emitting device of low cost wherein improvement of yield of manufacturing processes and shortening a manufacturing term are realized by reducing photolithography processes concerning the manufacturing a transistor, and to provide an electric apparatus using the light emitting device. SOLUTION: A gate electrode 115 which is arranged above a semiconductor film 101 formed on insulator 100 is formed of conducting films 110, 114 constituted of plural layers. By using difference (selectivity at the time of etching) of the respective etching rates of the plural layers, the impurity concentration of impurity regions (especially, LDD regions 111, 112) formed in the semiconductor film 101 is controlled.