发明名称 |
Method of manufacturing semiconductor device of dual-gate construction, and semiconductor device manufactured thereby |
摘要 |
There is described a method of manufacturing a semiconductor device of dual-gate construction, which method prevents occurrence of a highly-resistant local area in a gate electrode of dual-gate construction. A polysilicon layer which is to become a conductive layer of a gate electrode of dual-gate construction is formed on an isolation oxide film. N-type impurities are implanted into an n-type implantation region of the polysilicon film while a photoresist film is taken as a mask. P-type impurities are implanted into a p-type impurity region of the polysilicon film 3 while another photoresist film is taken as a mask. Implantation of n-type impurities and implantation of p-type impurities are performed such that an overlapping area to be doped with these impurities in an overlapping manner is inevitably formed.
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申请公布号 |
US2002025663(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010766844 |
申请日期 |
2001.01.23 |
申请人 |
MITSUBISHI DENKI KABUSHIKI KAISHA |
发明人 |
YOSHIYAMA KENJI;HIGASHITANI KEIICHI;SUGIYAMA MASAO |
分类号 |
H01L27/092;H01L21/265;H01L21/8238;(IPC1-7):H01L21/823;H01L21/425;H01L21/476 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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