发明名称 |
Semiconductor integrated circuit and fabrication method thereof |
摘要 |
A semiconductor integared circuit having a high withstand voltage TFT and a TFT which is capable of operating at high speed in a circuit of thin film transistors (TFT) and methods for fabriacting such circuits will be provided. A gate insulating film of the TFT required to operate a high speed (e.g., TFT used for a logic circuit) is relatively thinned less than a gate insulating film of the TFT which is required to have high withstand voltage (e.g., TFT used for switching high voltage signals).
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申请公布号 |
US2002024048(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010967697 |
申请日期 |
2001.09.28 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
OHTANI HISASHI |
分类号 |
H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/49;(IPC1-7):H01L29/76;H01L31/036;H01L31/112 |
主分类号 |
H01L21/77 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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