| 摘要 |
PROBLEM TO BE SOLVED: To provide a compound semiconductor, having proper crystallinity and low resistivity, which could not be achieved by a GaN-based compound semiconductor, and to provide a method of manufacturing the same, and also provide a semiconductor light-emitting device using this compound semiconductor which has superior electrical and optical characteristics. SOLUTION: In this compound semiconductor, Ga1-xAlxN layer (0<=x<=1) is added with In and is doped with donors. By applying compressive strain to the crystal of such a compound semiconductor, an expansion strain in the crystal caused by nitrogen holes can be reduced, thus obtaining a good N type compound semiconductor which has fewer lattice defects and a superior crystallinity. |
