| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device capable of raising and hightly integrating a MIM capacitance element, reducing a resistance of a gate electrode G of a MISFET for constituting a CMOS in the case of forming this MIM capacitance element and the CMOS on the same semiconductor substrate and simplifying manufacturing steps. SOLUTION: The semiconductor integrated circuit device comprises a lower electrode D of the MIM capacitance element having a lower electrode D, a capacity insulating film C and an upper electrode U, and the gate electrode G of the MISFET for constituting the CMOS, made of a tantalum films so that the capacity insulating film C of the MIM capacitance element is a thermal oxidation silicon film 17 formed on the tantalum film.
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