SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device with a nitride film which can lower electrical stress. SOLUTION: A gate nitride film 4 containing fluorine is formed on an N-type well layer 2 by a plasma CVD method in a gas atmosphere containing silicon tetrafluoride (SiF4) and ammonium (NH3). Thus, the dangling bond in the gate nitride film 4 is terminated by an Si-F combination to lower an interface level between the gate nitride film 4 and the N-type well layer 2. So, a semiconductor device of low electrical stress is manufactured.