| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for depositing a film on a substrate by reacting hydroxyl radical with a precursor so that the precursor is decomposed. SOLUTION: Hydroxyl radical, which is produced in a hydroxyl-ion producing device 14 outside of a chemical vapor deposition reactor 30, are mixed with a precursor to form a hydroxyl ions-precursor mixture. The hydroxyl ions- precursor mixture is introduced into the chemical vapor deposition reactor 30. The precursor is selected among silane, silicon, organic metal compound, and silicon-contained gas. An inert gas is used as carrier gas of the precursor.
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