发明名称 |
Novel approach to structurally reinforcing the mechanical performance of silicon level interconnect layers |
摘要 |
A conductive via pattern (110) between the uppermost metal interconnect layer (Mn ) and next underlying metal interconnect layer (Mn-1) in the bond pad areas strengthens the interlevel dielectric (ILD3) between metal layers (Mn and Mn-1). The conductive via layer (110) may, for example, comprise parallel rails (114) or a grid of cross-hatch rails (116). By spreading the stress concentration laterally, the conductive via layer (110) inhibits micro-cracking from stress applied to the bond pad (112).
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申请公布号 |
US2002025417(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010938261 |
申请日期 |
2001.08.23 |
申请人 |
CHISHOLM MICHAEL F.;EDWARDS DARVIN R.;HOTCHKISS GREGORY B.;RINCON REYNALDO;SUNDARARAMAN VISWANATHAN |
发明人 |
CHISHOLM MICHAEL F.;EDWARDS DARVIN R.;HOTCHKISS GREGORY B.;RINCON REYNALDO;SUNDARARAMAN VISWANATHAN |
分类号 |
H01L23/52;B32B15/04;H01L21/3205;H01L21/60;H01L23/485;(IPC1-7):B32B15/04 |
主分类号 |
H01L23/52 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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