发明名称 Semiconductor integrated circuit device and method for designing the same
摘要 A semiconductor integrated circuit device is disclosed that can provide greater flexibility of layout while essentially ensuring circuit characteristics, and at the same time providing an minimum electrostatic discharge breakdown withstand value according to Charged Device Model (CDM) at all input/output (I/O) terminals. For each I/O terminal a size of a CDM protective device can be optimized in response to reference electric potential wiring resistance between an input protective device, a MOSFETs that can constitute an internal circuit, and an input resistance.
申请公布号 US2002024045(A1) 申请公布日期 2002.02.28
申请号 US20010939870 申请日期 2001.08.27
申请人 HAYASHIDA YOKO;HAYANO KIMINORI;FURUTA HIROSHI 发明人 HAYASHIDA YOKO;HAYANO KIMINORI;FURUTA HIROSHI
分类号 H01L27/04;H01L21/822;H01L21/8234;H01L27/02;H01L27/06;H01L27/088;(IPC1-7):H01L23/58 主分类号 H01L27/04
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