发明名称 |
Methods of forming a contact structure in a semiconductor device |
摘要 |
A method of forming a contact structure in a semiconductor device includes forming an interlayer insulating layer containing impurities on a semiconductor substrate. The interlayer insulating layer is patterned to form a pad contact hole. The pad contact hole is filled with a conductive pad. Thermal oxidation annealing is then carried out to form an oxide layer on a top surface of the conductive pad and at an interface between the conductive pad and the interlayer insulating layer.
|
申请公布号 |
US2002025669(A1) |
申请公布日期 |
2002.02.28 |
申请号 |
US20010754266 |
申请日期 |
2001.01.05 |
申请人 |
HWANG MIN-WK;NOH JUN-YONG |
发明人 |
HWANG MIN-WK;NOH JUN-YONG |
分类号 |
H01L21/28;H01L21/316;H01L21/60;H01L21/768;H01L21/8242;H01L23/522;H01L27/108;(IPC1-7):H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|