LASER ANNEALING METHOD OF AMORPHOUS THIN FILM AND ITS EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To solve the problem that a process for dehydrogenation by leaving an amorphous Si thin film in a high temperature furnace is necessary in order to reduce hydrogen content in the amorphous Si thin film before the conventional laser annealing process for crystallization, but reduction of treatment time is required when a liquid crystal display device using a low temperature polysilicon is manufactured since the process for dehydrogenation needs about 6 hours for treatment. SOLUTION: In a laser beam profiling process for crystallization, an unnecessary sag is subjected to dehydrogenation by irradiation of a pulse laser beam 7 on the amorphous Si thin film 1 containing a great deal of hydrogen, and laser irradiation for crystallization is performed.