SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

摘要

An object is to obtain a semiconductor device manufacturing method capable of forming shallow extension regions in insulated-gate transistors. A side wall material containing about 1 to 20% of phosphorus, such as PSG is deposited on the sides of an opening to a film thickness of tens of nanometers to about 100 nm and etched back to form phosphorus-containing side walls (15a) and (15b) respectively adjacent to boron-containing side walls (10a) and (10b). An interlayer insulating film (48) of silicon nitride etc. is then formed on the silicon nitride film (14). A thermal process performed during formation of the interlaver insulating film (48) forms N-type extension regions (18a) and (18b) in the NMOS region (41) through a diffusion where phosphorus contained in the phosphorus-containing side walls (15a) and (15b) serves as the diffusion source and P-type extension regions (19a) and (19b) in the PMOS region (42) through a diffusion where boron contained in the boron-containing side walls (10a) and (10b) serves as the diffusion source.