| 摘要 |
The semiconductor laser device includes the semiconductor substrate made of GaAs, the lower clad layer above the substrate, the well layer made of InGaAs above the lower clad layer, and the upper clad layer above the well layer. Furthermore, the diffusion preventing layer is formed on at least one surface of the substrate, lower clad layer, well layer, and upper clad layer. This diffusion preventing layer is characterized in that it has a forbidden band wider than that of the well layer. Finally, the optical damage suppressing layer is formed above the diffusion preventing layer. This optical damage suppressing layer also has a forbidden band wider than that of the well layer.
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