| 摘要 |
To dry-etch a thin metal film in a trench such as an line trench in a semiconductor device with good reproducibility independently of the longitudinal length of the trench and without requiring etching end detection, a metal film is deposited and buried in a through hole or line trench of the semiconductor device and then anisotropically dry-etched by irradiating the object to be processed with charged particles. At this time, the object to be processed is kept at a predetermined electric potential, and a magnetic field is almost vertically applied to the object to be processed such that charged particles are incident on the object to be processed at an incident angle theta while spirally moving, thereby anisotropically dry-etching the metal film outside the trench.
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