SEMICONDUCTOR POLYSILICON COMPONENT AND METHOD OF MANUFACTURE THEREOF

摘要

A thin aluminum (120) is formed on a transparent substrate (110) by evaporation (refer to (a)-(b)). Next, a first thin zinc oxide (130) is formed by sputtering with the surface of the aluminum film (120) DC-biased (c). A second thin zinc oxide (140) is formed on the surface of the first thin zinc oxide (130) by low-temperature MOCVD (d). The second thin zinc oxide (140) deposited by MOCVD on the first thin zinc oxide (130) having a-axis orientation can have a-axis orientation. Since the thin aluminum (120) is absorbed in the first thin zinc oxide by heat when deposited by MOCVD, transmissivity is improved, and a ZnO/ZnO/aluminum/glass structure is highly transparent.