发明名称 SEMICONDUCTOR POLYSILICON COMPONENT AND METHOD OF MANUFACTURE THEREOF
摘要 <p>A thin aluminum (120) is formed on a transparent substrate (110) by evaporation (refer to (a)-(b)). Next, a first thin zinc oxide (130) is formed by sputtering with the surface of the aluminum film (120) DC-biased (c). A second thin zinc oxide (140) is formed on the surface of the first thin zinc oxide (130) by low-temperature MOCVD (d). The second thin zinc oxide (140) deposited by MOCVD on the first thin zinc oxide (130) having a-axis orientation can have a-axis orientation. Since the thin aluminum (120) is absorbed in the first thin zinc oxide by heat when deposited by MOCVD, transmissivity is improved, and a ZnO/ZnO/aluminum/glass structure is highly transparent.</p>
申请公布号 WO2002017368(P1) 申请公布日期 2002.02.28
申请号 JP2001003998 申请日期 2001.05.14
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