| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a dual gate electrode having an in situ boron-doped polysilicon film having stable characteristics. SOLUTION: The method for forming the dual gate electrode of a semiconductor element comprises the steps of vapor depositing a P-type doped polysilicon film 18 on an upper part of a gate insulating film, then forming a photosensitive film 20 opened on the P-type doped polysilicon film 18 of an NMOS transistor region, implanting an N-type counter in the opened region of the NMOS transistor, and forming an N-type doped polysilicon film 18'. When the thus formed P-type doped polysilicon film 18, the N-type doped polysilicon film 1' are used for the dual gates, characteristics of the device are improved.
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