| 摘要 |
PROBLEM TO BE SOLVED: To provide a system and a method for vapor deposition by which vapor deposition can be performed always at a constant film deposition rate from the initiation of vapor deposition to the completion of vapor deposition. SOLUTION: In the vapor deposition system, a vapor deposition chamber 1 is provided therein with a vapor deposition source 2, a holding fixture 5 for holding an object 4 of vapor deposition in the flow passage of a vapor-deposition stream 3, a film thickness monitor 6 disposed in the flow passage of the vapor-deposition stream 3 and used for measuring the film deposition rate on the object 4, a first shutter 7 capable of shielding the object 4 at the position right before the object 4 from the vapor-deposition stream, a second shutter 8 capable of shielding the monitor 6 from the vapor-deposition stream 3, and a film deposition rate control means 9 for automatically controlling the vapor deposition source 2 so that the deposition rate can be held constant, based on the result of measurement of the deposition rate on the object 4 by the monitor 6. Vapor deposition onto the object 4 is started after the deposition rate in the monitor 6 at the initiation of vapor deposition becomes stabilized; and, after vapor deposition onto the object 4 is started, the vapor deposition source 2 is automatically controlled by the control means 9 so that the deposition rate can always be held constant.
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