| 摘要 |
<p>A process for producing a semiconductor configuration includes the steps of providing a semiconductor substrate, providing a buffer oxide layer (40) on the semiconductor substrate and providing a hard mask on the buffer oxide layer. An STI trench is etched by using the hard mask and a liner oxide layer (20) is provided in the STI trench. The hard mask is removed to expose the buffer oxide layer and the buffer oxide layer is removed by an etching process. The buffer oxide layer is etched more rapidly than the liner oxide layer in the etching process. A gate oxide layer is provided on the semiconductor substrate. A semiconductor configuration is also provided.</p> |
