发明名称 PLASMA CHEMICAL VAPOR DEPOSITION CHAMBER FOR SUPPLYING UNIFORM CLEANING GAS
摘要 PURPOSE: A plasma chemical vapor deposition chamber for supplying uniform cleaning gas is provided to uniformly eliminate oxide layers deposited on the inner wall of the chamber or on a gas supply apparatus, by including a plurality of injectors formed on a circular tube. CONSTITUTION: An inner wall of the chamber(200) confines a predetermined inner space. A radio frequency(RF) coil(250) applies RF power to the chamber. A gas injection unit supplies reaction gas for chemical vapor deposition and plasma formation gas to the inner space of the chamber. A cleaning supply unit(300) supplies cleaning gas for eliminating a material layer attached to the inside of the chamber, having a circular type installed along the inner wall of the chamber so that the cleaning gas is uniformly supplied to the inside of the chamber.
申请公布号 KR20020015161(A) 申请公布日期 2002.02.27
申请号 KR20000048327 申请日期 2000.08.21
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 KIM, SEON RAE;NA, DONG GEUN
分类号 H01L21/205;(IPC1-7):H01L21/205 主分类号 H01L21/205
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