发明名称 |
PLASMA CHEMICAL VAPOR DEPOSITION CHAMBER FOR SUPPLYING UNIFORM CLEANING GAS |
摘要 |
PURPOSE: A plasma chemical vapor deposition chamber for supplying uniform cleaning gas is provided to uniformly eliminate oxide layers deposited on the inner wall of the chamber or on a gas supply apparatus, by including a plurality of injectors formed on a circular tube. CONSTITUTION: An inner wall of the chamber(200) confines a predetermined inner space. A radio frequency(RF) coil(250) applies RF power to the chamber. A gas injection unit supplies reaction gas for chemical vapor deposition and plasma formation gas to the inner space of the chamber. A cleaning supply unit(300) supplies cleaning gas for eliminating a material layer attached to the inside of the chamber, having a circular type installed along the inner wall of the chamber so that the cleaning gas is uniformly supplied to the inside of the chamber.
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申请公布号 |
KR20020015161(A) |
申请公布日期 |
2002.02.27 |
申请号 |
KR20000048327 |
申请日期 |
2000.08.21 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, SEON RAE;NA, DONG GEUN |
分类号 |
H01L21/205;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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