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发明名称
Method of fabricating a short channel self-aligned VMOS field effect transistor
摘要
申请公布号
EP0931350(B1)
申请公布日期
2002.02.27
申请号
EP19970912638
申请日期
1997.05.21
申请人
ADVANCED MICRO DEVICES INC.
发明人
WOLLESEN, DONALD, L.;FATEMI, HOMI
分类号
H01L21/336;H01L29/423;H01L29/45;H01L29/49;H01L29/78;(IPC1-7):H01L29/423
主分类号
H01L21/336
代理机构
代理人
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