METHOD FOR FORMING SELF-ALIGNED CONTACT OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a self-aligned contact of a semiconductor device is provided to reduce etching of interlayer dielectric patterns in a subsequent etch and cleaning process, by forming an etch stop layer spacer on both sidewalls of the interlayer dielectric pattern for insulating adjacent contact pads. CONSTITUTION: A plurality of gate patterns(107) are formed on a semiconductor substrate(100). The first etch stop layer is formed on the semiconductor substrate including the gate patterns. An interlayer dielectric(116) is formed on the first etch stop layer. The interlayer dielectric is patterned to form an opening exposing the first etch stop layer between the gate patterns, and the interlayer dielectric pattern(116a) is formed on the gate patterns. The second etch stop layer is formed on the first etch stop layer and the interlayer dielectric pattern. The second and first etch stop layers are anisotropically etched to form a spacer(112b,120a) on both sidewalls of the gate pattern and the interlayer dielectric pattern. A conductive layer filling the opening is formed on the resultant structure having the spacer.