METHOD FOR FORMING SEMICONDUCTOR DEVICE USING SALICIDE PROCESS

摘要

PURPOSE: A method for forming a semiconductor device using a salicide process is provided to selectively form a silicide layer only on a gate electrode layer, by performing the salicide process after only the upper surface of a gate pattern is exposed. CONSTITUTION: The gate pattern(105) composed of a gate oxide layer(102) and the gate electrode layer(103) is formed on a semiconductor substrate(100). Impurity ions are implanted into both sides of the gate pattern to form a source/drain region(112). An insulation layer is formed on the entire surface of the semiconductor substrate having the source/drain region. The insulation layer is etched to expose the gate electrode layer. A metal layer is formed on the insulation layer including the exposed gate electrode layer. A heat treatment is performed regarding the resultant structure having the metal layer to form a metal silicide layer(122) on the exposed gate electrode layer.