METAL VIA CONTACT OF SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF

摘要

PURPOSE: A metal via contact of a semiconductor device is provided to improve reliability, by forming a via contact having an excellent profile while a spin-on-glass(SOG) low dielectric layer in which a signal is a little delayed by parasitic capacitance is used as an interlayer dielectric. CONSTITUTION: An interlayer dielectric having a four-layered structure composed of the first insulation layer, the SOG low dielectric layer(13), the second insulation layer and a silicon oxynitride layer(31') is formed on a substrate(10). A metal via contact is formed on the interlayer dielectric by a sputtering method, wherein the upper portion of the metal via contact is broad and the lower portion of the metal via contact is narrow.