| 发明名称 |
Method for lattice matched growth of semiconductor layers |
| 摘要 |
A multiple quantum well light modulator is provided including a semiconductor substrate of InP, a multiple quantum well region, disposed above the InP substrate, composed of InGaAs and having a thickness of about 4 mu m. The modulator is characterized by a lattice mismatch of less than 2 X 10<-4>. |
| 申请公布号 |
EP0689230(B1) |
申请公布日期 |
2002.02.27 |
| 申请号 |
EP19950304091 |
申请日期 |
1995.06.14 |
| 申请人 |
AT&T CORP. |
发明人 |
CUNNINGHAM, JOHN EDWARD;PATHAK, RAJIV NATH;GOOSSEN, KEITH WAYNE |
| 分类号 |
G02F1/015;G02B6/12;G02F1/017;H01L21/20;H01L21/203;H01S3/10 |
主分类号 |
G02F1/015 |
| 代理机构 |
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代理人 |
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