Semiconductor laser device having lower threshold current

摘要

A semiconductor laser device includes a QW active layer structure including a GaxIn1-xAs1-ySby layer wherein 0.3 </= 1-x and 0.003 </= y </= 0.008, or a QW active layer structure including a GaxIn1-xAs1-y1-y2Ny1Sby2 layer wherein 0.3 </= 1-x, 0< y1 <0.03 and 0.002 </= y2 </= 0.06. The semiconductor laser device suppresses the three-dimensional epitaxial growth, and has superior optical characteristics including a low threshold current. <IMAGE>