发明名称 |
METAL INTERCONNECTIONS AND ACTIVE MATRIX SUBSTRATE USING METAL INTERCONNECTIONS |
摘要 |
PURPOSE: A metal interconnection and an active matrix substrate using the metal interconnection are provided to obtain an active matrix substrate of high yield rate and reliability by preventing the generation of a residual film and disconnection. CONSTITUTION: A ground pattern film(12) for interconnections is formed on a glass substrate(11), and a plating film(13) is formed by selective plating on the ground pattern film. A taper angle(alpha) formed by both sides of the plating film and the surface of the glass substrate is made in the range of zero to 90 degrees. Since new interconnections are formed on the plating film without disconnection, a residual film is not generated. Moreover, patterning of new films on the plating film is possible.
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申请公布号 |
KR20020014987(A) |
申请公布日期 |
2002.02.27 |
申请号 |
KR20010029123 |
申请日期 |
2001.05.25 |
申请人 |
SHARP CORPORATION |
发明人 |
CHIKAMA YOSHIMASA;IZUMI YOSHIHIRO |
分类号 |
G02F1/1345;C23C18/16;C23C18/52;G02F1/1343;G02F1/1362;G02F1/1368;H01L21/288;H01L21/3205;H01L21/768;H01L23/52;H01L29/423;H01L29/43;H01L29/49;H01L29/786;H05K3/24;(IPC1-7):G02F1/134 |
主分类号 |
G02F1/1345 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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