发明名称 |
Method of fabricating improved copper metallization including forming and removing passivation layer before forming capping film |
摘要 |
A selected passivating layer is purposely formed on an exposed surface of a Cu and/or Cu alloy interconnect member, thereby avoiding the adverse consequences stemming from formation of a thick copper oxide layer thereon. The passivating layer is formed by treating the exposed surface of the Cu or Cu alloy interconnect member: (a) with a copper corrosion-inhibiting chemical; or (b) by electroless plating a metal layer on the surface of the Cu or Cu alloy layer; or (c) depositing a metallic compound on the surface of the Cu or Cu alloy layer by CVD. The passivating layer can then be removed. Embodiments include electroplating or electroless plating Cu or a Cu alloy to fill a damascene opening in an ILD, chemical mechanical polishing, then treating the exposed surface of the Cu/Cu alloy interconnect to form the passivating, layer thereon, and depositing a silicon nitride diffusion barrier layer thereon.
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申请公布号 |
US6350687(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US19990271171 |
申请日期 |
1999.03.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
AVANZINO STEVEN C.;YANG KAI;LOPATIN SERGEY;LUKANC TODD P. |
分类号 |
H01L21/288;H01L21/768;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/288 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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