| 摘要 |
When a polishing target film on a wafer is pressed against and contacted with a polishing pad to be subjected to CMP polishing, the wafer is supported by a backing plate through a contact pressure adjusting section. The surface of the adjusting section is worked to have a high region corresponding to a high region of the polished surface of the polishing target film and to have a low region corresponding to a low region of the polished surface thereof in order to adjust the contact pressure for contacting the polished surface with the polishing pad in accordance with the difference in the height of the polished surface. Accordingly, the polished surface of the polishing target film can uniformly planarized. |
