| 摘要 |
A method of fabricating a semiconductor memory device is provided. In accordance with preferred embodiments of methods of the present invention, a cell array region and a peripheral circuitry region are defined by forming a field region on the surface of a semiconductor. In the cell array region, a number of wordlines are formed at a predetermined interval. Each region demarcated by the wordlines is filled with a semiconductor material in which source region, drain region and contact regions for connection between capacitors and bitlines are formed. Then, exposed entire surfaces in the cell array region and in the peripheral circuitry region are planarized. On the planarized surface, bitlines are formed without forming bitline contacts. In order to insulate the bitlines from each other, an insulation sidewall spacer is formed on each sidewall of the bitlines.
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