| 摘要 |
PURPOSE: A semiconductor device is provided to effectively prevent a groove from being formed in the surface of a semiconductor substrate by making the thickness of a conductive layer smaller and by relatively reducing an error in an etch process of the conductive layer. CONSTITUTION: Wafers are brought into proximity in a state with one wafer a slight, substantially uniform clearance away from the other wafer. One point of at least one wafer of the two wafers is pressed against the other wafer so that a SOI(silicon on insulator) structure is formed. |
