| 发明名称 |
Process for fabrication of an all-epitaxial-oxide transistor |
| 摘要 |
A method and structure of forming an integrated circuit chip having a transistor includes forming a conductive oxide layer, forming a Mott transition oxide layer over the conductive oxide layer and forming an insulative oxide layer over the Mott transition oxide layer.
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| 申请公布号 |
US6350622(B2) |
申请公布日期 |
2002.02.26 |
| 申请号 |
US20010768172 |
申请日期 |
2001.01.24 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
MISEWICH JAMES A.;SCHROTT ALEJANDRO G. |
| 分类号 |
H01L49/00;(IPC1-7):H01L21/00;H01L21/16 |
主分类号 |
H01L49/00 |
| 代理机构 |
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