发明名称 |
Embedded DRAM on silicon-on-insulator substrate |
摘要 |
A semiconductor device is presented which is directed to a method of forming embedded DRAM and logic devices, where the DRAM devices are formed in bulk, single crystalline semiconductor regions and logic devices are formed in silicon-on-insulator ("SOI") regions and where buried, doped glass is used as a mask to form deep trenches for storage in the bulk region. The resulting structure is also disclosed.
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申请公布号 |
US6350653(B1) |
申请公布日期 |
2002.02.26 |
申请号 |
US20000689096 |
申请日期 |
2000.10.12 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ADKISSON JAMES W.;DIVAKARUNI RAMACHANDRA;GAMBINO JEFFREY P.;MANDELMAN JACK A. |
分类号 |
H01L27/10;H01L21/8242;H01L21/84;H01L27/108;H01L27/12;(IPC1-7):H01L21/336 |
主分类号 |
H01L27/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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