Semiconductor memory device and manufacturing method of the same

摘要

A plurality of charge storage electrodes are formed on an interlayer insulating film which is formed on a silicon substrate. A plurality of insulating members which surround periphery of the charge storage electrodes and which are separated from each other are formed. A capacitance insulating film is so formed as to cover the plurality of charge storage electrodes and the plurality of insulating members. A plate electrode is formed on the capacitance insulating film. The insulating members are formed of a silicon nitride film which has a function as an etching stopper for protecting the interlayer insulating film.